metal silicide interconnection 金属硅化物互连 ; 金属
refractory metal silicide [电子] 难熔金属硅化物
transition-metal silicide 金属硅化物
ternary metal silicide 三元金属硅化物
Metal Silicide Process 金属硅化物制作
metal silicide interaffixion 金属
rare-earth metal silicide 稀土金属硅化物
transition metal silicide Cr3Si 过渡金属硅化物Cr3Si
metal silicide composite coating 金属硅化物复合材料涂层
The metal silicide layer prepared by the method has high heat stability and controllable growth speed.
本发明方法制备的金属硅化物层热稳定性高,且生长速度可控。
The invention is a preparation method of metal silicide film by microwave hydrogen plasma, relates to film preparation field.
一种微波氢等离子体制备金属硅化物薄膜的方法,用于薄膜制备领域。
The invention belongs to the technical field of microelectronic devices, in particular to a method for forming ultrathin controllable metal silicide.
本发明属于微电子器件技术领域,具体为一种形成超薄可控的金属硅化物的方法。
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